Strain effects, electronic parameters, and electronic structures in modulation-doped In xGa 1-xAs/In yAl 1-yAs coupled step-rectangular quantum wells

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7621-7625

  Choo, D C ^a,d   Kim, T W ^a   Yoo, K H ^b   Meining, C J ^c   McCombe, B D ^c  

^a Hanyang University   (South Korea)

^b Kyung Hee University   (South Korea)

^c UNIVERSITY AT BUFFALO   (United States)

^d Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRONIC PARAMETERS;

BAND STRUCTURE; CRYSTAL ORIENTATION; CYCLOTRON RESONANCE; ELECTRON GAS; ELECTRONIC STRUCTURE; FAST FOURIER TRANSFORMS; FERMI LEVEL; HALL EFFECT; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0347566274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631078     Document Type: Article

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