Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3484-3487

  Dimoulas, A ^a,c   Davidow, J ^a   Giapis, K P ^a   Georgakilas, A ^b   Halkias, G ^b   Kornelios, N ^b  

^a California Institute of Technology   (United States)

^b INSTITUTE OF COMPUTER SCIENCE   (Greece)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000557488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363219     Document Type: Article

References (13)

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11. A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, C. Michelakis, and A. Christou, Phys. Rev. B 47, 7198 (1993).
12. See for example, R. Cingolani and K. Ploog, Adv. Phys. 40, 535 (1991).
13. A. Tabata, T. Benyattou, G. Guillot, A. Georgakilas, K. Zekentes, and G. Halkias, Appl. Surf. Sci. 63. 182 (1993).