Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5089-5092

  Kim, T W ^a   Lee, D U ^a   Choo, D C ^a   Jung, M ^a   Yoo, K H ^b   Comanescu, G ^c   McCombe, B D ^c  

^a Kwangwoon University   (South Korea)

^b Kyung Hee University   (South Korea)

^c UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOTRON-RESONANCE MEASUREMENTS; ELECTRON CARRIER DENSITY; ELECTRON EFFECTIVE MASS; ELECTRON OCCUPATION; ELECTRONIC PARAMETERS; ELECTRONIC SUBBAND ENERGIES; EXCHANGE-CORRELATIONS; FOURIER; MODULATION-DOPED; NONPARABOLICITY EFFECTS; PEAK ABSORPTION; POTENTIAL BARRIERS; SELF-CONSISTENT METHOD; SHUBNIKOV-DE HAAS; STEP QUANTUM WELLS; SUBBANDS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRON ABSORPTION; ELECTRON GAS; ELECTRONIC PROPERTIES; FOURIER ANALYSIS; FOURIER TRANSFORMS; GALLIUM; MAGNETIC FIELDS; NUCLEAR PHYSICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037091478     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454198     Document Type: Article

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