Electrical properties of the 85% Bi2Te3-15% Bi2Se3 thermoelectric material doped with SbI3 and CuBr

Journal of Physics and Chemistry of Solids

Volumn 59, Issue 6-7, 1998, Pages 1039-1044

  Hyun, D B ^a   Hwang, J S ^a   Oh, T S ^b   Shim, J D ^a   Kolomoets, N V ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

A. chalcogenides; A. intermetallic compounds; B. crystal growth; D. electrical properties

Indexed keywords

CARRIER MOBILITY; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HALL EFFECT; SEEBECK EFFECT; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

CHALCOGENIDES;

SEMICONDUCTING INTERMETALLICS;

EID: 0032090059     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(97)00242-4     Document Type: Article

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