Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4521-4523

  Koizumi, A ^a   Fujiwara, Y ^a   Urakami, A ^a   Inoue, K ^a   Yoshikane, T ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON EMISSION; ERBIUM; FIBER LASERS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TEMPERATURE;

ERBIUM DOPED FIBER AMPLIFIERS; ORGANOMETALLIC VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0347516562     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630165     Document Type: Article

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