SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 182-189

Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor

(5) Yakovlev, E V a Talalaev, R A b Makarov, Yu N b Yavich, B S c Wang, W N c

a SOFT IMPACT LTD (Russian Federation)

b STR Inc (United States)

c University of Bath (United Kingdom)

Author keywords

A1. Computer simulation; A1. Heat and mass transfer; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; AMMONIA; CHEMICAL REACTORS; COOLING; DECOMPOSITION; DEPOSITION; FLOW PATTERNS; HEAT TRANSFER; HEATING; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR WEIGHT; OPTIMIZATION; RESEARCH AND DEVELOPMENT MANAGEMENT; SAPPHIRE;

COOLING CHANNELS; FLOW RATES;

GALLIUM NITRIDE;

EID: 0347415804 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.11.010 Document Type: Conference Paper

Times cited : (19)

References (11)

1
- 0037291833
- Karpov S.Yu. J. Crystal Growth. 248:2003;1.
- (2003) J. Crystal Growth , vol.248 , pp. 1
- Karpov, S.Yu.¹

2
- 0348024162
- Ph.D. Thesis, University of Erlangen-Nuernberg
- M. Dauelsberg, Ph.D. Thesis, University of Erlangen-Nuernberg, 1999.
- (1999)
- Dauelsberg, M.¹

3
- 0346132483
- Yakovlev E.V., Shpolyanskiy Y.A., Talalaev R.A., Karpov S.Y., Makarov Y.N., Bergunde T., Lowry S.A. Electrochem. Soc. Proc. 2001. 13:2001;292.
- (2001) Electrochem. Soc. Proc. 2001 , vol.13 , pp. 292
- Yakovlev, E.V.¹ Shpolyanskiy, Y.A.² Talalaev, R.A.³ Karpov, S.Y.⁴ Makarov, Y.N.⁵ Bergunde, T.⁶ Lowry, S.A.⁷

4
- 0034496971
- Pawlowski R.P., Theodoropoulos C., Salinger A.G., Mountziaris T.J., Moffat H.K., Shadid J.N., Thrush E.J. J. Crystal Growth. 221:2000;622.
- (2000) J. Crystal Growth , vol.221 , pp. 622
- Pawlowski, R.P.¹ Theodoropoulos, C.² Salinger, A.G.³ Mountziaris, T.J.⁴ Moffat, H.K.⁵ Shadid, J.N.⁶ Thrush, E.J.⁷

5
- 0034818516
- Dauelsberg M., Hardtdegen H., Kadinski L., Kaluza A., Kaufmann P. J. Crystal Growth. 223:2003;21.
- (2003) J. Crystal Growth , vol.223 , pp. 21
- Dauelsberg, M.¹ Hardtdegen, H.² Kadinski, L.³ Kaluza, A.⁴ Kaufmann, P.⁵

6
- 0034825238
- Hardtdegen H., Kaluza A., Gauer D., Ahe M.v.d., Grimm M., Kaufmann P., Kadinski L. J. Crystal Growth. 223:2003;15.
- (2003) J. Crystal Growth , vol.223 , pp. 15
- Hardtdegen, H.¹ Kaluza, A.² Gauer, D.³ Ahe, M.V.D.⁴ Grimm, M.⁵ Kaufmann, P.⁶ Kadinski, L.⁷

7
- 0346763057
- Dauelsberg M., Kandinski L., Makarov Yu.N., Woelk E., Strauch G., Schmitz D., Juergensen H. Inst. Phys. Conf. Ser. 142:1996;887.
- (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 887
- Dauelsberg, M.¹ Kandinski, L.² Makarov, Yu.N.³ Woelk, E.⁴ Strauch, G.⁵ Schmitz, D.⁶ Juergensen, H.⁷

8
- 0000148088
- Jacko M.G., Price S.J.W. Can. J. Chem. 41:1963;1560.
- (1963) Can. J. Chem. , vol.41 , pp. 1560
- Jacko, M.G.¹ Price, S.J.W.²

9
- 0035426404
- Talalaev R.A., Yakovlev E.V., Karpov S.Yu., Makarov Yu.N. J. Crystal Growth. 230:2001;232.
- (2001) J. Crystal Growth , vol.230 , pp. 232
- Talalaev, R.A.¹ Yakovlev, E.V.² Karpov, S.Yu.³ Makarov, Yu.N.⁴

10
- 0002558774
- Karpov S.Yu., Prokofyev V.G., Yakovlev E.V., Talalaev R.A., Makarov Yu.N. MRS Internet J. Nitride Semicond. Res. 4:1999;4.
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.4 , pp. 4
- Karpov, S.Yu.¹ Prokofyev, V.G.² Yakovlev, E.V.³ Talalaev, R.A.⁴ Makarov, Yu.N.⁵

11
- 2342568025
- Yakovlev E.V., Talalaev R.A., Vorob'ev A.N., Makarov Yu.N. Electrochem. Soc. Proc. 2003. 08:2003;258.
- (2003) Electrochem. Soc. Proc. 2003 , vol.8 , pp. 258
- Yakovlev, E.V.¹ Talalaev, R.A.² Vorob'ev, A.N.³ Makarov, Yu.N.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.