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Volumn 37, Issue 1, 1998, Pages 10-14

Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment

Author keywords

(NH4)2Sx treatment; Contact resistance; GaAs; MBE; Regrown interface; Transmission line model

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

EID: 0031673063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.10     Document Type: Article
Times cited : (11)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.