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Volumn 37, Issue 1, 1998, Pages 10-14
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Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment
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NEC CORPORATION
(Japan)
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Author keywords
(NH4)2Sx treatment; Contact resistance; GaAs; MBE; Regrown interface; Transmission line model
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Indexed keywords
AMMONIUM COMPOUNDS;
ANNEALING;
CAPACITANCE MEASUREMENT;
CARRIER CONCENTRATION;
ELECTRIC RESISTANCE;
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
VOLTAGE MEASUREMENT;
REGROWN INTERFACES;
TRANSMISSION LINE MODEL;
SEMICONDUCTOR JUNCTIONS;
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EID: 0031673063
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.37.10 Document Type: Article |
Times cited : (11)
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References (20)
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