Optimization of a non-cryogenic quantum infrared detector

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 515-518

  Marre, G ^a   Carras, M ^a,b   Vinter, B ^a   Berger, V ^a,b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

And modeling; Charge carriers; Generation recombination; III V semiconductor p n diodes and heterojunctions; Optoelectronic device characterizationdesign; Photodetectors

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CRYOGENICS; ELECTRIC POTENTIAL; ENERGY GAP; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS;

CARRIER TRANSPORT; HETEROSTRUCTURE PHOTOVOLTAIC DETECTORS;

INFRARED DETECTORS;

EID: 0347128567     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.070     Document Type: Conference Paper

References (3)

1. Marre G., Vinter B., Berger V. Semicond. Sci. Technol. 18:2003;284.
2. Rakovska A., Berger V., Marcadet X., Vinter B., Bouzehouane K., Kaplan D. Semicond. Sci. Technol. 15:2000;34.
3. J.L. Reverchon, G. Marre, C. Renard, B. Vinter, X. Marcadet, M. Carras, V. Berger, Physica E 20 (2003) X-ref: 10.1016/j-physe.2003.09.001.