Effects of Hydrogenation on Electrical Properties of B-Doped Homoepitaxial Diamond

New Diamond and Frontier Carbon Technology

Volumn 9, Issue 2, 1999, Pages 115-117

  Masai, Shigeo ^a,b   Yamanaka, Sadanori ^a,c   Watanabe, Hideyuki ^a,c   Kawata, Sakae ^a,b   Takeuchi, Daisuke ^a   Okushi, Hideyo ^a   Kurosu, Tateki ^b   Kajimura, Koji ^a,c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

B doped diamond film; Hall effect measurement; High conductivity layer; Hydrogenated diamond film

Indexed keywords

EID: 0347020314     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. K. Hayashi, S. Yamanaka, H. Watanabe, T. Sekiguchi, H. Okushi and K. Kajimura: J. Appl. Phys. 81 (1996) 744.
2. A. Hokazono and H. Kawarada: Jpn. J. Appl. Phys. 36 (1997) 7133.
3. H. Kawarada, H. Sasaki and A. Sato: Phys. Rev. B 52 (1995) 11351.