Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 404-410

  Sudo, Shinya ^a   Mori, Kazuo ^a   Sasaki, Tatsuya ^a  

^a NEC CORPORATION   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting quaternary alloys

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; DISTRIBUTED FEEDBACK LASERS; LIGHT INTERFERENCE; MASKS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

MASK INTERFERENCE EFFECT; SELECTIVE EPITAXY; SEMICONDUCTING QUATERNARY ALLOYS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346785322     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.035     Document Type: Conference Paper

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