Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 428-434

  Kudo, Koji ^a   Furushima, Yuji ^a   Nakazaki, Tadashi ^a   Yamaguchi, Masayuki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; EPITAXIAL GROWTH; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SILICA; WAVEGUIDES; WAVELENGTH DIVISION MULTIPLEXING;

BANDGAP WAVELENGTH; FABRY-PEROT LASERS; LASER CHARACTERISTICS; LASING WAVELENGTH CONTROLLABILITY; MASK PATTERN; MICROARRAY SELECTIVE EPITAXY; MULTIPLE QUANTUM WELL WAVEGUIDES; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0033123921     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788401     Document Type: Article

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