Steady-state and transient room-temperature photoluminescence of AlN films, prepared by RF magnetron sputtering

Diamond and Related Materials

Volumn 12, Issue 10-11, 2003, Pages 1897-1902

  Ligatchev, V ^a   Wong, T K S ^a   Yoon, S F ^a   Ahn, J ^a   Rusli, ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Aluminum nitride; Room temperature visible photoluminescence

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; MAGNETRON SPUTTERING; MICROSTRUCTURE; PHOTOLUMINESCENCE;

LASER EXCITATION;

DIAMONDS;

SPUTTERING;

EID: 0346750559     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00284-X     Document Type: Article

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