Defects density distribution of AIN films produced by RF sputtering in argon-nitrogen-hydrogen mixture

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2000-January, Issue , 2000, Pages 387-390

  Ligatchev, V ^a   Yoon, S F ^a   Ahn, J ^a   Zhang, Q ^a   Rusli, ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DEFECT DENSITY; DEFECTS; MAGNETRON SPUTTERING; MICROELECTRONICS; MIXTURES; NITROGEN;

ALUMINUM NITRIDE FILMS; DEFECTS DENSITY; DENSITY OF DEFECTS; ENERGY RANGES; NITROGEN VACANCIES; QUANTITATIVE AGREEMENT; RADIO FREQUENCY MAGNETRON SPUTTERING; SPACE-CHARGE-LIMITED CURRENT;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 84949808100     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2000.1022971     Document Type: Conference Paper

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