Temperature measurement in rapid thermal processing

Solid State Technology

Volumn 40, Issue 4, 1997, Pages 63-74

  Timans, Paul J ^a,b,c,d  

^a AG Associates Inc   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c University's Cavendish Laboratory   (United States)

^d A G Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346598557     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

1. For a recent review of the subject see "Advances in Rapid Thermal and Integrated Processing," ed. F. Roozeboom, Kluwer Academic Publishers, Dordrecht, 1996.
2. P. J. Timans, "The thermal radiative properties of semiconducors," Advances in Rapid Thermal and Integrated Processing, ed. F. Roozeboom, Kluwer Academic Publishers, Dordrecht, pp. 35-101, 1996.
3. P. J. Timans, "The role of thermal radiative properties of semiconductor wafers in RTP," Mat. Res. Soc. Symp. Proc. 429, 3, 1996.
4. P. J. Timans, "The effect of coatings on the emissivity of silicon," Rapid Thermal Processing '94, eds. R. B. Fair, B. Lojek, RTP '94, pp. 186-193, 1994.
5. B. Nguyenphu, M. Oh, A. T. Flory, "Temperature monitoring by ripple pyrom" etry in RTP," Mat. Res. Soc. Symp. Proc. 429, 291, 1996.
6. D. W. Pettibone, et al., "The effect of thin dielectric films on the accuracy of pyrometric temperature measurement," Mat. Res. Soc. Symp. Proc. 52, 209, 1986.
7. P. J. Timans, "Temperature measurement strategies for RTP in semiconductor manufacturing," Rapid Thermal Processing '96, eds. R. B. Fair, M. L. Green, B. Lojek, R.P.S. Thakur, RTP '96, Round Rock, pp. 145-56, 1996.
8. J. S. Nakos, "Application of RTP in manufacturing: The effect of emissivity and coupling," Rapid Thermal Processing '93, eds. R. B. Fair, B. Lojek, RTP '93, Scottsdale, pp. 421-428, 1993.