Glassy transformation and structural change in Ge2Sb2Te5 studied by impedance measurements

Journal of Optoelectronics and Advanced Materials

Volumn 3, Issue 2, 2001, Pages 333-336

  Morales Sanchez E ^a,b   Gonzalez Hernandez J ^a   Prokhorov, E ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE QUERÉTARO   (Mexico)

Author keywords

Chalcogenide semiconductors; Impedance; Phase transformation

Indexed keywords

CHALCOGENIDES; ELECTRIC IMPEDANCE; NANOCRYSTALLINE MATERIALS; PHASE TRANSITIONS;

CHALCOGENIDE MATERIALS; CHALCOGENIDE SEMICONDUCTORS; CRYSTALLIZATION PROCESS; IMPEDANCE MEASUREMENT; NUCLEATION CENTER; SENSITIVE METHOD; SITU IMPEDANCE MEASUREMENT; THIN FILM ALLOYS;

ELECTRIC IMPEDANCE MEASUREMENT;

EID: 0346524560     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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