Photoionization of DX-related traps in indium- and gallium-doped Cd 1-xMnxTe

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 886-889

  Placzek Popko E ^a   Szatkowski, J ^a   Becla, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

CdTe; DX centers; Metastability

Indexed keywords

BINDING ENERGY; CAPACITANCE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EVAPORATION; FERMI LEVEL; GALLIUM; LATTICE CONSTANTS; LATTICE VIBRATIONS; QUENCHING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SOLDERING;

IONIZATION ENERGIES; METASTABILITY;

PHOTOIONIZATION;

EID: 0346504182     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.213     Document Type: Conference Paper

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