Deep levels in Cd0.99Mn0-01Te : Ga

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1413-1418

  Szatkowski, J ^a   Placzek Popko, E ^a   Sieranski, K ^a   Fialkowski, P ^a   Hajdusianek, A ^a   Bieg, B ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MARITIME UNIVERSITY OF SZCZECIN   (Poland)

Author keywords

CdMnTe; Defect centers; DLTS

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ARRHENIUS PLOTS; FRENKEL POOLE MECHANISM; MIXED CRYSTALS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 12844276167     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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