Optical characterization of donor doped ternary alloy Ga 1-xNxAs and GaN-Ga1-xNxAs MQW by using infrared Fourier transform spectroscopy

International Journal of Infrared and Millimeter Waves

Volumn 24, Issue 1, 2003, Pages 61-70

  Shayesteh, Farjami S ^a   Solimany, M A ^a  

^a UNIVERSITY OF GUILAN   (Iran)

Author keywords

GaN GaNAs MQW; GaNAs alloy; Infrared spectroscopy Phonon response

Indexed keywords

ATTENUATION; ELECTRONIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT POLARIZATION; LIGHT REFLECTION; OPTICAL PROPERTIES; PHONONS; SEMICONDUCTOR DOPING; TERNARY SYSTEMS;

PHONON RESPONSE; TERNARY ALLOYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0346502186     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021635800574     Document Type: Article

References (9)

1. Mirjalili G, Parker T J, Farjami Shayesteh S, Bulbul M, Smith S R, T S Chen and Foxon T, 1998 Phys. Rev. B 57, 4556
2. Bi WG, and Tu CW1997 Appl. Phys. Lett. 70 1608
3. Leibiger G, Gottschalch V, and Schubert 2001 Phys. Stat. Sol. 228 259.
4. Dumelow T and Tilley D R, 1993, J. Opt. Soc. Am. A10, 633
5. Farjami Shayesteh S and Hasan Zadeh H, 2002, International Journal of infrared and Millimeter Waves, Vol. 23, No. 10, 1465.
6. Raj N and Tilley D R 1985 Solid State Commun. 55 373
7. Agronovich V and Kravtsov V E, 1985, Solid State Commun. 55, 85.
8. Farjami Shayesteh, Dumelow T, Parker T J,Mirjalili, Vorobjev L E, and Kastalsky, 1996, Semicon. Sci. Technol. 11, 323-330.
9. Raj N, Camley R E and Tilley D R 1987 J. Phys. C 20 5203.