Far-infrared spectra of reflectivity, transmission and hot-hole emission in p-doped GaAs/Al0.5Ga0.5As multiple quantum wells

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 323-330

  Farjami Shayesteh, S ^a   Dumelow, T ^a,b   Parker, T J ^a   Mirjalili, G ^a   Vorobjev, L E ^c   Donetsky, D V ^c   Kastalsky, A ^d  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^d STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CALCULATIONS; ELECTRIC FIELDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS;

ALUMINUM GALLIUM ARSENIDE; BREWSTER ANGLE; FAR INFRARED INTERSUBBAND ABSORPTION; HOT HOLE EMISSION; REFLECTIVITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030110659     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/009     Document Type: Article

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