Deposition and characterization of Ga2Se3 thin films prepared by a novel chemical close-spaced vapour transport technique

Journal of Physics Condensed Matter

Volumn 15, Issue 47, 2003, Pages 8185-8193

  Rusu, M ^a   Wiesner, S ^a   Lindner, S ^a   Strub, E ^a   Rohrich J ^a   Wurz R ^a   Fritsch, W ^a   Bohne, W ^a   Schedel Niedrig, Th ^a   Lux Steiner, M Ch ^a   Giesen, Ch ^b   Heuken, M ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGENTS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; FILM PREPARATION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THIN FILMS; TRANSPORT PROPERTIES; VAPORIZATION; X RAY DIFFRACTION ANALYSIS;

CHEMICAL CLOSE-SPACED VAPOUR TRANSPORT; ELASTIC RECOIL DETECTION ANALYSIS; GALLIUM SELENIDE; POWDER SOURCE MATERIAL; STOICHIOMETRIC VOLATILIZATION; THERMOELECTRIC PROBE METHOD;

GALLIUM COMPOUNDS;

EID: 0346361673     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/47/021     Document Type: Article

References (23)

1. Hahn H and Klinger W 1949 Z. Anorg. Chem. 259 135
2. Ghémard P G, Jaulmes S, Etienne J and Flahaut J 1983 Acta Crystallogr. C 39 968
3. Lübbers D and Leute V 1982 J. Solid State Chem. 43 339
4. Teraguchi N, Kato F, Konagai M and Takahashi K 1989 Japan. J. Appl. Phys. 28 L2134
5. Takani S, Nakano A, Ogata K and Kikawa T 1992 Japan. J. Appl. Phys. 31 L458
6. Park S Ch, Kwon S H, Song J S and Ahn B T Sol. Energy Mater. Sol. Cells 59 43-9
7. Fischer D, Meyer N, Kuczmik, M, Beck M, Jäger-Waldau A and Lux-Steiner M Ch 2001 Sol. Energy Mater. Sol. Cells 67 105-12
8. Park S Ch, Lee D Y, Ahn B T, Yoon K H and Song J 2001 Sol. Cells 69 99-105
9. Contreras M A, Gabor A M, Tennant A L, Asher A, Tuttle J R and Noufi R 1994 Prog. Photovolt.: Res. Appl. 2 287
10. Nadenau V, Harikos D and Schock H W 1999 J. Appl. Phys. 85 534
11. Nishtani M, Negami T, Terauchi M and Hirao T 1992 Japan. J. Appl. Phys. 31 192
12. Bohne W, Röhrich J and Röschert G 1998 Nucl. Instrum. Methods B 633 136-8
13. Lübeers D and Leute V 1982 J. Solid State Chem. 43 339
14. Peressi M and Baldereschi A 1998 J. Appl. Phys. 83 3092-5
15. Okamoto T, Takegami T, Yamada A and Konagai M 1995 Japan. J. Appl. Phys. 34 5984-8
16. Bergmaier A, Dollinger G and Frey C M 1995 Nucl. Instrum. Methods B 99 488-90
17. Mayer M 1997 SimNRA Users Guide Report IPP 9/113 Max-Planck-Institut für Plasmaphysik, Garching, Germany
18. Schroder D K 1990 Semiconductor Material and Device Characterisation (New York; Wiley)
19. Takumi M, Ueda T, Koshio Y, Nishimura H and Nagata K 2001 Phys. Status Solidi b 223 271-4
20. Pankove J I 1976 Optical Processes in Semiconductors (New York: Dover)
21. Guizzetti G, Meloni F and Baldereschi A 1980 J. Phys. Soc. Japan 49 93
22. Ueno K, Kawayama, M, Dai Z R, Koma A and Ohuchi F S 1999 J. Cryst. Growth 207 69-76
23. Rusu M, Wiesner S, Fuentes Marrón D, Meeder A, Doka S, Bohne W, Lindner S, Schedel-Niedrig Th, Giesen Ch, Heuken M and Lux-Steiner M Ch 2003 Thin Solid Films at press