Formation of ytterbium silicide nanowires on Si(0 0 1)

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 394-398

  Kuzmin, M ^a,b   Laukkanen, P ^a   Perala R E ^a   Vaara, R L ^a   Vayrynen I J ^a  

^a UNIVERSITY OF TURKU   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Scanning tunneling microscopy; Self assembly; Silicides; Silicon; Surface structure, morphology, roughness, and topography; Ytterbium

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SILICON COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE; ULTRAHIGH VACUUM;

ATOMIC RESOLUTION; LATTICE MISMATCH;

YTTERBIUM COMPOUNDS;

EID: 0346122802     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.09.005     Document Type: Article

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