Strain relaxation in a lattice-mismatched heterostructure

Journal of Crystal Growth

Volumn 200, Issue 3, 1999, Pages 421-426

  Lim, Y S ^a   Lee, J Y ^a   Kim, T W ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; NUMERICAL METHODS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

ENERGY MINIMIZATION THEORY; LATTICE MISMATCHED HETEROSTRUCTURE; MISFIT CELL; RELAXATION THICKNESS; RESIDUAL IN-PLANE STRAIN;

HETEROJUNCTIONS;

EID: 0032642199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00066-4     Document Type: Article

References (22)

1. F. Capasso, Physics of Quantum Electron Devices, Springer, Heidelberg, 1990.
2. Weisbuch C., Vinter B. Quantum Semiconductor, Structures. 1991;Academic Press, Boston.
3. Agrawal G.P., Dutta N.K. Semiconductor Lasers. 1993;Van Nostrand Reinhold, New York.
4. Yu P.W., Jogai B., Rogers T.J., Martin P.A., Ballingall J.M. Appl. Phys. Lett. 65:1994;3263.
5. Kim T.W., Jung M., Lee D.U., Yoo K.H., Yoo K.H. Appl. Phys. Lett. 69:1996;1752.
6. van der Merwe J.H. J. Appl. Phys. 34:1964;123.
7. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
8. People R., Bean J.C. Appl. Phys. Lett. 47:1985;322.
9. González D., Araújo D., Aragón G., García R. Appl. Phys. Lett. 71:1997;2475.
10. Klem J.F., Fu W.S., Gourley P.L., Jones E.D., Brennan T.M., Lott J.A. Appl. Phys. Lett. 56:1990;1350.
11. Beanland R. J. Appl. Phys. 72:1992;4031.
12. Marée P.M.J., Barbour J.C., van der Veen J.F., Kavanagh K.L., Bulle-Lieuwma C.W.T., Viegers P.A. J. Appl. Phys. 62:1987;4413.
13. Hull R., Bean J.C., Buescher C. J. Appl. Phys. 66:1989;5837.
14. Dodson B.W., Tsao J.Y. Appl. Phys. Lett. 51:1987;1325.
15. Dustan D.J., Kidd P., Fewster P.F., Andrew N.L., Grey R., David J.P.R., González L., González Y., Sacedón A., González-Sanz F. Appl. Phys. Lett. 65:1994;839.
16. Fontaine C., Galliard J.P., Magli S., Millon A., Piaguet J. Appl. Phys. Lett. 50:1987;903.
17. Jain S.C., Willander M., Maes H. Semicon. Sci. Technol. 11:1996;641.
18. Price G.L. Appl. Phys. Lett. 53:1988;1288.
19. Fiory A.T., Bean J.C., Feldman L.C., Robinson I.K. J. Appl. Phys. 56:1984;1227.
20. Hagen W., Strunk H. Appl. Phys. 17:1978;85.
21. Eaglesham D.J., Kvam E.P., Maher D.M., Humphreys C.J., Bean J.C. Phillos. Mag. A. 59:1989;1059.
22. Cherns D., Mylonas S., Ashenford D.E., Lunn B. Phillos. Mag. A. 74:1996;553.