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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 761-764

Passivation of growth defects in GaAs/AlGaAs multiple quantum well structures by CF4 plasma

(5) Shamirzaev, T S a Zhuravlev, K S a Kobitski, A Yu a,b Wagner, H P b Zahn, D R T b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

Defect passivation; Photoluminescence; Plasma treatment

Indexed keywords

CRYSTAL DEFECTS; PASSIVATION; PHOTOLUMINESCENCE; PLASMA THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM WELL STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035668958 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00831-6 Document Type: Article

Times cited : (2)

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