Synthesis and Characterization of Device-Quality B-Doped Homoepitaxial Diamond Films

New Diamond and Frontier Carbon Technology

Volumn 9, Issue 2, 1999, Pages 118-121

  Yamanaka, Sadanori ^a,b   Watanabe, Hideyuki ^a,b   Masai, Shigeo ^a,c   Sekiguchi, Takashi ^d   Takeuchi, Daisuke ^a   Okushi, Hideyo ^a   Kajimura, Koji ^a,b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOKAI UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

B doped homoepitaxial diamond film; Clean CVD system; Device quality; Hall mobility; Trimethylboron

Indexed keywords

EID: 0345759294     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. S. Yamanaka, H. Watanabe, S. Masai, D. Takeuchi, H. Okushi and K. Kajimura: Jpn. J. Appl. Phys. 37 (1998) L1129.
2. K. Hayashi, S. Yamanaka, H. Watanabe, T. Sekiguchi, H. Okushi and K. Kajimura: J. Crystal Growth 183 (1998) 338.
3. B. A. Fox, M. L. Hartsell, D. M. Malta, H. A. Wynands, G. J. Tessmer and D. L. Dreifus: Mater. Res. Soc. Symp. Proc. 416 (1996) 319.
4. A. T. Collins: Ch. 3 in The Properties of Diamond, Ed. J. E. Field (Academic Press, London, 1979).