Effects of Nanometer-Thick Passivation Layers on the Mechanical Response of Thin Gold Films

Journal of Nanoscience and Nanotechnology

Volumn 2, Issue 3-4, 2002, Pages 427-433

  Prorok, Bart C ^a   Espinosa, Horacio D ^a  

^a Northwestern University   (United States)

Author keywords

CMOS Device; Gold Thin Films; Membrane; Passivation Layers; Stress Strain

Indexed keywords

GOLD; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; COMPARATIVE STUDY; ELASTICITY; EVALUATION; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; MOTION; NANOTECHNOLOGY; STIMULATION; SURFACE PROPERTY; TENSILE STRENGTH;

ELASTICITY; GOLD; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOTION; NANOTECHNOLOGY; PHYSICAL STIMULATION; SILICON; STRESS, MECHANICAL; SURFACE PROPERTIES; TENSILE STRENGTH;

EID: 0345733333     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2002.113     Document Type: Article

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