Growth and optical properties of (1 1 2)B HgTe/Hg1-xCdxTe superlattices

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 1185-1189

  Backer, C R ^a   Pfeuffer Jeschke, A ^a   Latussek, V ^a   Li, M ^a   Ortner, K ^a   Daumer, V ^a   Oehling, S ^a   Tang, W ^b   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

HgTe HgCdTe; MBE; Optical properties; Superlattice

Indexed keywords

EID: 6644226721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80248-0     Document Type: Article

References (11)

1. N.F. Johnson, H. Ehrenreich, P.M. Hui, P.M. Young, Phys. Rev. B 41 (1990) 3655.
2. A. Simon, D. Bertho, D. Boiron, C. Jonanin, Phys. Rev. B 42 (1990) 5221.
3. C.R. Becker, L. He, M.M. Regnet, M.M. Kraus, Y.S. Wu, G. Landwehr, X.F. Zhang, H. Zhang, J. Appl. Phys. 74 (1993) 2486.
4. J.R. Meyer, C.A. Hoffman, T.H. Myers, N.C. Giles, in: T.S. Moss (Ed.), Handbook on Semiconductors, vol. 3, S. Mahajan (Ed.), North-Holland, Amsterdam, 1994, p. 535.
5. Z. Yang, Z. Yu, Y. Lansari, S. Hwang, J.W. Cook Jr., J.F. Schetzina, Phys. Rev. B 49 (1994) 8096.
6. C.R. Becker, V. Latussek, W. Spahn, F. Goschenhofer, S. Oehling, G. Landwehr, in: R.E. Longshore, J.W. Baars (Eds.), Growth and Characterization of Materials for Infrared Detectors, SPIE Proc. Vol. 2554, 1995, p. 6.
7. M. von Truchsess, V. Latussek, F. Goschenhofer, C.R. Becker, G. Landwehr, E. Batke, R. Sizmann, P. Helgesen, Phys. Rev. B 51 (1995) 17618.
8. M. Möller, R.N. Bicknell-Tassius, G. Landwehr, J. Appl. Phys. 72 (1992) 5108.
9. M. Li, R. Gall, C.R. Becker, T. Gerhard, W. Faschinger, G. Landwehr, J. Appl. Phys., accepted.
10. Y. Kim, A. Ourmazd, M. Bode, R.D. Feldman, Phys. Rev. Lett. 63 (1989) 636.
11. S. Oehling, M. Ehinger, W. Spahn, A. Waag, C.R. Becker, G. Landwehr, J. Appl. Phys. 79 (1996) 748.