Cathodoluminescence and electron beam induced current study of partially relaxed AlGaAs/GaAs/InGaAs heterojunction phototransistors under operating conditions

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1438-1445

  Sjolund O ^a,b   Lin, H T ^b   Rich, D H ^b   Ghisoni, M ^a   Larsson, A ^a   Wang, S ^a   Thordsson, J ^a   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345439135     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365921     Document Type: Article

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