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Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 8015-8023

Influence of structural defects on carrier recombination and current gain in an InGaAs/AIGaAs/GaAs heterojunction phototransistor

(5) Lin, H T a Rich, D H a Sjolund O b Ghisoni, M b Larsson, A b

a University of Southern California (United States)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344576989 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.362353 Document Type: Article

Times cited : (13)

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