Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

Journal of Lightwave Technology

Volumn 21, Issue 1, 2003, Pages 170-175

  Saito, Shigeki ^a   Kimura, Tomoyuki ^b   Tanabe, Tadao ^a   Suto, Ken ^a   Oyama, Yutaka ^a   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

GaP; Optical communication; Raman amplifier; Taper; Waveguide

Indexed keywords

AMPLIFICATION; OPTICAL COMMUNICATION; OPTICAL PUMPING; OPTICAL WAVEGUIDES; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

GALLIUM PHOSPHIDE; OPTICAL LOSS; WAVEGUIDE SEMICONDUCTOR RAMAN AMPLIFIERS;

SEMICONDUCTOR LASERS;

EID: 0345373832     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2003.808644     Document Type: Article

References (24)

1. J. Nishizawa, "History and characteristics of semiconductor laser," Denshi Kagaku, vol. 14, pp. 17-31, 1963.
2. J. Nishizawa and K. Suto, "Semiconductor Raman laser," J. Appl. Phys., vol. 51, 2429-2431, 1980.
3. K. Suto and J. Nishizawa, "Low threshold semiconductor Raman laser," IEEE J. Quantum Electron., vol. QE-19, pp. 1521-1254, 1983.
4. K. Suto, T. Kimura, T. Saito, A. Watanabe, and J. Nishizawa, "GaP-AlGaP waveguide Raman lasers and amplifiers for optical communication," Proc. 24th IEEE Int. Symp. Compound Semiconductors, pp. 573-576, Sept. 1997.
5. 1-xP waveguides for light frequency discrimination," Inst. Elect. Eng. Proc.-Optoelectron., vol. 145, pp. 105-108, 1998.
6. T. Saito, K. Suto, T. Kimura, and J. Nishizawa, "Gain of high-intensity pulse-pumped GaP-AlGaP waveguide Raman amplifier," IEE Proc.-Optoelectron., vol. 146, pp. 209-212, Oct. 1999.
7. T. Tanabe, K. Suto, T. Saito, T. Kimura, Y. Oyama, and J. Nishizawa, "Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguide," J. Appl. Phys, submitted for publication.
8. K. Suto, T. Saito, T. Kimura, J. Nishizawa, and T. Tanabe, "Semiconductor Raman amplifier for terahertz bandwidth optical communication," J. Lightwave. Technol., vol. 20, pp. 705-711, Apr. 2002.
9. T. Saito, K. Suto, T. Kimura, A. Watanabe, and J. Nishizawa, "Raman gain and optical loss in GaP-AlGaP waveguides," J. Appl. Phys., vol. 87, pp. 3399-3403, Apr. 2000.
10. K. Minami, Y. Yoshida, and Y. Kurata, "Slant-propagation characteristics in tapered optical waveguides: Analysis," Appl. Opt., vol. 33, pp. 8014-8021, Dec. 1994.
11. E. Gehrig, D. Woll, M. A. Tremont, A. Robertson, R. Wallenstein, and O. Heiss, "Saturation behavior and self-phase modulation of picosecond pulses in single-stripe and tapered semiconductor laser amplifiers," J. Opt. Soc. Amer. B., vol. 17, pp. 1452-1456, Aug. 2000.
12. Y. Cai, T. Mizumoto, T. Saito, and Y. Naito, "A novel three-guide optical coupler using a taper-formed waveguide," J. Appl. Phys., vol. 69, pp. 2810-2814, Mar. 1991.
13. T. A. Strasser, W. Y. Hsu, and M. C. Gupta, "Grating coupler acceptance design utilizing a tapered waveguide structure," Appl. Opt., vol. 32, pp. 6006-6017, Oct. 1993.
14. 2 by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm," Opt. Lett., vol. 18, pp. 1931-1933, Nov. 1993.
15. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained layer InGaAs/AlGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, pp. 740-742, Aug. 1992.
16. N. Bloembergen, Nonlinear Optics. New York: W. A. Benjamin, 1965.
17. N. Tzoar and R. Pascone, "Radiation loss in tapered waveguides," J. Opt. Soc. Amer., vol. 71, pp. 1107-1114, Sept. 1981.
18. K. Suto, T. Kimura, and J. Nishizawa, "Fabrication and characteristics of tapered waveguide semiconductor Raman lasers," Inst. Elect. Eng. Proc. Optoelectron., vol. 143, pp. 113-118, 1996.
19. T. Saito, K. Suto, J. Nishizawa, and M. Kawasaki, "Spontaneous Raman scattering in [100], [110], and [11-2] directional GaP waveguides," J. Appl. Phys., 2001.
20. T. Saito, K. Suto, T. Kimura, A. Watanabe, and J. Nishizawa, "Backward and forward Raman scattering in highly efficient GaP Raman amplifier waveguides," J. Lumin., vol. 87-89, pp. 883-885, 2000.
21. J. Nishizawa and Y. Okuno, "Liquid phase epitaxial growth of GaP by a temperature difference method under controlled vapor pressure," IEEE Trans. Electron Devices, vol. ED-22, pp. 716-719, 1975.
22. 1-xP system by the temperature difference method under controlled vapor pressure (TDM-CVP)," J. Cryst. Growth., vol. 99, pp. 297-301, 1990.
23. M. Smith, J. S. Hughes, R. M. Rammert, M. L. Osowski, G. C. Papen, J. T. Verdeyen, and J. J. Coleman, "Wavelength-tunable asymmetric cladding ridge-waveguide distributed bragg reflector lasers with very narrow linewidth," IEEE J. Quantum Electron., vol. 32, pp. 1225-1229, July 1996.
24. H. Hashimoto, T. Saito, K. Suto, and J. Nishizawa, "Photocapacitance of deep levels in GaP crystals surface treated by reactive ion etching," J. Vac. Sci. Technol. B., vol. 20, pp. 566-569, Mar./Apr. 2002.