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Volumn 93, Issue 1, 2003, Pages 43-46

Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; LASER MODE LOCKING; SAPPHIRE; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICES;

EID: 0037249156     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513870     Document Type: Article
Times cited : (13)

References (18)
  • 1
  • 2
    • 0038137786 scopus 로고
    • J. Nishizawa, Denshi Kagaku 14, 17 (1963); Denshi Gijutu 7, 101 (1965).
    • (1965) Denshi Gijutu , vol.7 , pp. 101


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.