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Volumn 93, Issue 1, 2003, Pages 43-46
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Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFICATION;
LASER MODE LOCKING;
SAPPHIRE;
SCATTERING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICES;
RAMAN AMPLIFICATION;
WAVEGUIDES;
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EID: 0037249156
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1513870 Document Type: Article |
Times cited : (13)
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References (18)
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