Fabrication and characteristics of tapered waveguide semiconductor Raman lasers

IEE Proceedings: Optoelectronics

Volumn 143, Issue 2, 1996, Pages 113-118

  Suto, K ^a   Kimura, T ^b   Nishizawa, J ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Nonlinear optics; Optical communications; Semiconductor lasers

Indexed keywords

LIQUID PHASE EPITAXY; NONLINEAR OPTICS; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CHEMICAL ETCHING; OPTICAL LOSS; PHOTOLITHOGRAPHIC PATTERNING; SEMICONDUCTOR RAMAN LASERS; TEMPERATURE DIFFERENCE METHOD; WAVEGUIDE STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0030124188     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960238     Document Type: Article

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