Femtosecond laser-assisted microstructuring of silicon for novel detector, sensing and display technologies

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 481-482

  Carey, James E ^a   Mazur, Eric ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CURRENT VOLTAGE CHARACTERISTICS; DISPLAY DEVICES; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTODIODES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SOLAR CELLS; ULTRAFAST PHENOMENA;

FEMTOSECOND LASER ASSISTED MICROSTRUCTURING; INFRARED PHOTODETECTORS; ION THRUSTER PROPULSION; MASKLESS STRUCTURING PROCESS; MICROWAVE AMPLIFICATION; PHOTODIODE JUNCTIONS;

LASER APPLICATIONS;

EID: 0345328749     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. H. Her, R. J Finlay, C. Wu, S. Deliwala, and E. Mazur, Appl. Phys. Lett. 73, 1673-1675 (1998).
2. C. Wu, C. H. Crouch, L. Zhao, J. E. Carey, R. Younkin, J. A. Lenvinson, R. M. Farrell, P. Gothoskar, A. Karger, and E. Mazur Appl. Phys. Lett. 78, 1850-1852 (2001).
3. R. Younkin, J. E. Carey, E. Mazur, J. A. Levinson, and C. M. Friend, J. Appl. Phys. 93, 2626, (2003).
4. J. E. Carey, C. H. Crouch, M. A. Sheehy, M. Shen, C. M. Friend, and E. Mazur, submitted to Applied Physics Letters.