Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-μm spectral region

IEE Proceedings: Optoelectronics

Volumn 150, Issue 4, 2003, Pages 356-359

  Matveev, B A ^a   Aydaraliev, M ^a   Zotova, N V ^a   Karandashov, S A ^a   Il'inskaya, N D ^a   Remennyi, M A ^a   Stus N M ^a   Talalakin, G N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP CHIP DEVICES; HETEROJUNCTIONS; PHOTODIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TRANSPARENCY;

EPISIDE-DOWN CONSTRUCTION; FLIP CHIP BONDING; QUATERNARY STRUCTURE;

SEMICONDUCTOR LASERS;

EID: 0345328313     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030537     Document Type: Article

References (15)

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