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1
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0026692451
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Optoelectronic sensors based on narrow band A3B5 alloys
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SPIE, September
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N. V. Zotova, S. A. Karandashev, B. A. Matveev, A. V. Pentsov, S. V. Slobodchikov, N. N. Smirnova, N. M. Stus, G. N. Talalakin, I. I. Markov, "Optoelectronic sensors based on narrow band A3B5 alloys," Chemical, Biochemical, and Environmental Fiber Sensors III, Vol. 1587, pp. 334-345, SPIE, September 1991.
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Zotova, N.V.1
Karandashev, S.A.2
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Pentsov, A.V.4
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Smirnova, N.N.6
Stus, N.M.7
Talalakin, G.N.8
Markov, I.I.9
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2
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36549096461
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Room-temperature 1nAsSbP1. light-emitting diodes for CO2 detection at 4.2 rim
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Longwavelength low-threshold lasers based on 111-V compounds
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M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, N. M. Stus' and O.N. Talalakin, "Longwavelength low-threshold lasers based on 111-V compounds," Soy. Phys. Semicond., Vol. 27 No. 1, pp. 10-15, 1993.
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Aidaraliev, M.1
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Talalakin, O.N.6
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5
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0025660645
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Semiconductor emitter based 32-channel spectrophotometer module for real-time process measurements
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SPIE, March
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H. Keranen and J. Malinen, "Semiconductor emitter based 32-channel spectrophotometer module for real-time process measurements," In Process Optical Measurements and Industrial Methods, Vol. 1266, pp. 91-98, SPIE, March 1990.
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Process Optical Measurements and Industrial Methods
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Keranen, H.1
Malinen, J.2
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6
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0024663090
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Development and performance of a new high-resolution spectrophotometer using InGaAsP and InOaAs light emitting diodes in the near IR
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Humio Inaba, Kinpui Chan, "Development and performance of a new high-resolution spectrophotometer using InGaAsP and InOaAs light emitting diodes in the near IR," Infrared Phys., Vol. 29 No. 2-4, pp. 551-560, 1989.
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Esina, N.P.1
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Gas monitors employing infrared LEDs
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S. F. Johnston, "Gas monitors employing infrared LEDs", Meas.Sci.Technol, Vol. 3, pp. 191-195, 1992.
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Johnston, S.F.1
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84912911094
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0001245103
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Effect of inversed defect fomation process during the growth of InAsSbP /InAs epitaxial structures
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B. A. Matveev, N. M. Stus, O. N. Talalakin, "Effect of inversed defect fomation process during the growth of InAsSbP /InAs epitaxial structures," Soy. Phys. Crystallogr., Vol. 33, pp. 124-127, 1988.
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Matveev, B.A.1
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12
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0007140135
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Temperature dependence of the luminescence emitted by Indium Arsenide and by InAsSbP and InGaAs solid solutions
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M. Aidaraliev, N. V. Zotova, S. A. Karandashev and N. M. Stus', "Temperature dependence of the luminescence emitted by Indium Arsenide and by InAsSbP and InGaAs solid solutions," Soy. Phys. Semicond., Vol. 23 No. 4, pp. 37 1-373, 1989.
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13
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84975629381
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Optical multipass matrix systems
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S. M. Chemin, E. G. Barskaya, "Optical Multipass Matrix Systems," Appl.Optics, Vol. 30 No. 1, pp. 51-58, 1991.
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Appl.Optics
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Chemin, S.M.1
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15
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85052539730
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PCT patent application PCT / F192 / 00359
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PCT patent application PCT / F192 / 00359, "Spectrometer"
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Spectrometer
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16
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0005398532
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Thirty-two channel LED array spectrometer module with compact optomechanical consr.ruction
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SPIE, July
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J. Malinen, H. Keränen, T. Hannula and T. Hyvarinen, "Thirty-two channel LED array spectrometer module with compact optomechanical consr.ruction," Optomechanics and Dimensional Stability, Vol 1533, pp. 122-128, SPIE, July 1991.
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Optomechanics and Dimensional Stability
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Malinen, J.1
Keränen, H.2
Hannula, T.3
Hyvarinen, T.4
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17
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0010069961
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NIR analyzers can be miniature, rugged and handheld
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Ellis Horwood, New York
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T. Hyvarinen, E. Herrala, J. Malinen, and P. Niemelä, "NIR analyzers can be miniature, rugged and handheld," NEAR INFRA -RED SPECTROSCOPY Bridging the Gap between Data Analysis and NIR Applications, pp. 135-140, Ellis Horwood, New York, 1992.
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Hyvarinen, T.1
Herrala, E.2
Malinen, J.3
Niemelä, P.4
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