Disorder-induced phonon modes, built-in electric fields and structural properties of CdTe/GaAs heterostructures grown by MBE

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 350-356

  Melendez Lira M ^a   Jimenez Sandoval S ^a   Hernandez Calderon I ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ELECTRIC FIELD EFFECTS; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

FRANZ-KELDYSH OSCILLATIONS; PHOTOREFLECTANCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0345201729     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/012     Document Type: Article

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