Electrical properties of CoSi2 precipitates in cobalt-implanted silicon: A conducting atomic force microscopy study

Journal of Materials Science Letters

Volumn 17, Issue 3, 1998, Pages 219-222

  Mao, J M ^a,b   Xu, J B ^a   Peng, Q C ^a   Wong, S P ^a   Wilson, I H ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345184459     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006536328606     Document Type: Article

References (8)

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