Evolution of defect structures in silicon after low temperature implantation of hydrogen

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 163-166

  Bonde Nielsen, K ^a   Bech Nielsen, B ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ELECTRIC CHARGE; HYDROGEN; HYDROGEN BONDS; MATHEMATICAL MODELS; PROTONS; STRAIN;

PROTON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0345072505     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00292-X     Document Type: Article

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