Observation of 1H tunneling diffusion in crystalline Si

Applied Physics A: Materials Science and Processing

Volumn 64, Issue 2, 1997, Pages 207-210

  Langpape, Ch ^a   Fabian, S ^a   Klatt, Ch ^a   Kalbitzer, S ^a  

^a MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; HYDROGEN; ION IMPLANTATION; LOW TEMPERATURE PHENOMENA; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

CRYSTALLINE SILICON; TUNNELING DIFFUSION;

DIFFUSION;

EID: 0031071796     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050466     Document Type: Article

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