Fabrication and characterization of thick porous silicon layers for rf circuits

Sensors and Actuators, A: Physical

Volumn 108, Issue 1-3, 2003, Pages 117-120

  You, S Z ^a   Long, Y F ^a   Xu, Y S ^a   Zhu, Z Q ^a   Shi, Y L ^a   Lai, Z S ^a   Li, Z F ^a,b   Lu, W ^a,b   Li, A Z ^a,c  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Patterning; Porous silicon (PS); Raman spectrum; X ray diffraction

Indexed keywords

ANODIC OXIDATION; ELECTRIC CONDUCTIVITY; ETCHING; INSERTION LOSSES; INTEGRATED CIRCUIT LAYOUT; LATTICE CONSTANTS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; WAVEGUIDES; X RAY DIFFRACTION ANALYSIS;

RADIO FREQUENCY (RF) CIRCUITS;

POROUS SILICON;

EID: 0344945458     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.06.004     Document Type: Conference Paper

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