Tunnel oxynitride film formation for highly reliable flash memory

IEICE Transactions on Electronics

Volumn E79-C, Issue 6, 1996, Pages 819-824

  Arakawa, Tomiyuki ^a   Matsumoto, Ryoichi ^a   Hayashi, Takahisa ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Disturbance; Endurance; Flash memory; Oxynltride tunnel film; Retention

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; FILM GROWTH; LEAKAGE CURRENTS; NITROGEN COMPOUNDS; OXIDATION; OXIDES; THERMAL EFFECTS; THERMAL STRESS;

DRAIN DISTURBANCE; FILM FORMATION; FLASH MEMORY; FOWLER-NORDHEIM TUNNELING; MEMORY CELLS; RAPID THERMAL NITRIDATION; RAPID THERMAL OXIDATION; RAPID THERMAL OXYNITRIDATION; TUNNEL OXYNITRIDE FILM; WRITE ERASE CYCLES;

NONVOLATILE STORAGE;

EID: 0030169356     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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