Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 428, Issue 2, 1999, Pages 336-347

  Angarano, M M ^a   Bader A ^a   Creanza, D ^a   De Palma, M ^a   Fiore, L ^a   Maggi, G ^a   My, S ^a   Raso, G ^a   Selvaggi, G ^a   Tempesta, P ^a  

^a INFN SEZIONE DI BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DETECTORS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; MATHEMATICAL MODELS; NEUTRON IRRADIATION; POSITIVE IONS; SILICON;

MACROSCOPIC IRRADIATION EFFECTS; SILICON MICROSTRIP DETECTOR; SPICE MODEL;

NEUTRONS;

EID: 0344642584     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00042-X     Document Type: Article

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