Measurement of proton-induced radiation damage effects in double-sided silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 399, Issue 1, 1997, Pages 76-84

  Brandl, A ^a   Seidel, S ^a   Worm, S ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; IRRADIATION; LEAKAGE CURRENTS; MICROSTRIP DEVICES; PROTONS; RADIATION DAMAGE; SILICON SENSORS;

COUPLING CAPACITANCE; DOUBLE SIDED SILICON MICROSTRIP DETECTORS; PROTON IRRADIATION;

PARTICLE DETECTORS;

EID: 0031276820     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00913-3     Document Type: Article

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