Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate

Electronics Letters

Volumn 33, Issue 11, 1997, Pages 957-958

  Khoo, E A ^a   Pabla, A S ^a   Woodhead, J ^a   David, J P R ^a   Grey, R ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Gallium arsenide; Semiconductor junction lasers

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0031143042     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970615     Document Type: Article

References (7)

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6. ISHIHARA, A., and WATANABE, H.: 'Long-wavelength (1072nm) strained InGaAs quantum-well lasers grown on 1.0(misoriented (111)B GaAs', Jpn. J. Appl. Phys., 1994, 33, pp. 11361-1362
7. 2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate', Appl. Phys. Lett., 1991, 58, pp. 1704-1706