Effect of channeling of halo ion implantation on threshold voltage shift of metal oxide semiconductor field-effect transistor

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 938-939

  Hwang, Hyunsang ^a   Lee, Dong Hoon ^a   Ahn, Jae Gyung ^a   Byun, Jeong Soo ^a   Yang, Dooyoung ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344506098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116237     Document Type: Article

References (5)

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3. A. Hori, A. Hiroki, M. Segawa, T. Hori, A. Shinohara, M. Yasuhira, and S. Akiyama, Proc. IEEE Internal Electron Device Meeting 1992, 699 (1992).
4. D. Jung, J. Park, K. Lee, N. Kang, K. Kim, T. Shim, and J. Park, Proc. Int. Solid State Device Mater. 1995, 869 (1995).
5. T. E. Seidel, Appl. Phys. Lett. AIP 36, 447 (1980).