Influence of the doping concentration of Y1-yCa yBa2Cu3O7-δ drain-source channels on the properties of superconducting field-effect devices

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3528-3530

  Logvenov, G Yu ^a   Sawa, A ^a,b   Schneider, C W ^a   Mannhart, J ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; ELECTRIC RESISTANCE; PHASE DIAGRAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; YTTRIUM BARIUM COPPER OXIDES;

DRAIN-SOURCE (DS) CHANNELS; ELECTRIC SUSCEPTIBILITY;

ELECTRIC FIELD EFFECTS;

EID: 0344496702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622780     Document Type: Article

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