Experimental study of weak antilocalization effects in a high-mobility InxGa1-xAs/InP quantum well

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 3, 2003, Pages 353171-353178

  Studenikin, S A ^a   Coleridge, P T ^a   Ahmed, N ^a,b   Poole, P J ^a   Sachrajda, A ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITI BRUNEI DARUSSALAM   (Brunei Darussalam)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM; PHOSPHORUS;

ANTILOCALIZATION EFFECT; ARTICLE; INTERMETHOD COMPARISON; MAGNETIC FIELD; MAGNETIC RESISTANCE; MAGNETISM; MATHEMATICAL ANALYSIS; METAL BINDING; MOBILIZATION; QUANTUM CHEMISTRY; QUANTUM MECHANICS; QUANTUM WELL; RADIATION DETECTION; RADIATION SCATTERING; SEMICONDUCTOR; SPIN ORBIT SCATTERING TIME; STRUCTURE ACTIVITY RELATION; TEMPERATURE DEPENDENCE; TIME; VOLTAGE CLAMP;

EID: 0344307497     PISSN: 10980121     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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