Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 19, 2001, Pages 1933091-1933094

  Minkov, G M ^a   Germanenko, A V ^a   Rut, O E ^a   Sherstobitov, A A ^a   Zvonkov, B N ^b   Uskova, E A ^b   Birukov, A A ^b  

^a URAL FEDERAL UNIVERSITY   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON; ENERGY; LOW TEMPERATURE; MAGNETISM; QUANTUM MECHANICS; TEMPERATURE DEPENDENCE;

EID: 0001044660     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevb.64.193309     Document Type: Article

References (5)