Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

Materials Research Society Symposium - Proceedings

Volumn 779, Issue , 2003, Pages 165-170

  Kim, Hyung Seok ^a   Oh, Sang Ho ^a,b   Suh, Ju Hyung ^a   Park, Chan Gyung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; CRYSTAL LATTICES; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; RELAXATION PROCESSES; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

BISMUTH LANTHANUM TITANATE; LANTHANUM ALUMINATE; STRAIN RELAXATION; STRONTIUM TITANATE;

BISMUTH COMPOUNDS;

EID: 0344120731     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-779-w5.23     Document Type: Conference Paper

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