Bound-exciton-induced current bistability in a silicon light-emitting diode

Applied Physics Letters

Volumn 82, Issue 17, 2003, Pages 2823-2825

  Sun, J M ^a   Dekorsy, T ^a   Skorupa, W ^a   Schmidt, B ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; EXCITONS; SEMICONDUCTOR JUNCTIONS; SILICON;

BOUND EXCITONS;

LIGHT EMITTING DIODES;

EID: 0037959841     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570920     Document Type: Article

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