Large multiplication-bandwidth products in APDs with a thin InP multiplication layer

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 999-1000

  Yasuoka, Nami ^a   Kuwatsuka, Haruhiko ^a   Makiuchi, Masao ^a   Uchida, Toru ^a   Yasaki, Atsushi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

AVALANCHE PHOTODIODES; LARGE MULTIPLICATION-BANDWIDTH PRODUCTS; THIN INDIUM PHOSPHIDE MULTIPLICATION LAYER;

AVALANCHE DIODES;

EID: 0344034313     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Y. Kito, H. Kuwatsuka, T. Kumai, M. Makiuchi, T. Uchida, O. Wada, and M. Mikawa, "High-Speed Flip-Chip InP/InGaAs Avalanche Photodiode with Ultra low Capacitance and Large Gain-Bandwidth Products," IEEE Photon. Technol. Lett, 3, 1115-1116 (1991)
2. G. S. Kinsey, J. C. Campbell and A. G. Dentai, "Waveguide Avalanche Photodiode Operating at 1.55 mm with a gain-bandwidth product of 320GHz," IEEE Photon. Technol. Lett., 13, 842-844 (2001)
3. Hui. Nie, K. A. Amselm, C. Hu, S. S. Murtaza, B. G. steetman, and J. C. Campbell, "High-sensitivity resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz Gain-bandwidth product," Appl. Phys. Lett., 70. 161-163 (1997).
4. R. B. Emmons, "Avalanche-Photodiode Frequency Response," J. Appl. Phys, 38, 3705-3714 (1967)
5. F. Osaka, T. Mikawa, and O. Wada, "Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation," Jpn. J. Appl. Phys., 25, 394-401 (1986)